Microfluidic Design of Neuron-MOSFET based on ISFETA. Jain, and A. Garg
BITS Pilani, Goa, India
Bhartiya Vidyapeeth College, New Delhi, India
In this paper we suggest a device which combines the operation of a neuron-MOS and an ISFET. An ISFET is an ion-sensitive field effect transistor used to measure ion concentrations in a solution; when the ion concentration changes, the current through the transistor changes accordingly. A voltage between substrate and the oxide surfaces arises due to an ions sheath. It contains a conventional MOSFET and a gate electrode which is electrically floating and N-input gates capacitively coupled to the floating gate. The effective gate potential is a function of both the potentials applied and the coupling capacitances. With higher coupling capacitance, the effect of the applied potential on the gate and the output potential enhances. The microchannels (which act as multiple gates) can be arrangedto cause flow of charge between the drain and the source of the MOSFET similar to a logic \'and\' and logic \'or\' operation. Using the COMSOL Multiphysics simulation tools, the suggested device was simulated.